Top-Gate Organic Field-Effect Transistors with High Environmental and Operational Stability

被引：156

作者：

Hwang, Do Kyung ^{[1
]}

Fuentes-Hernandez, Canek ^{[1
]}

Kim, Jungbae ^{[1
]}

Potscavage, William J., Jr. ^{[1
]}

Kim, Sung-Jin ^{[1
]}

Kippelen, Bernard ^{[1
]}

机构：

[1] Georgia Inst Technol, COPE, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 10期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; AIR STABILITY; PERFORMANCE; POLYMER; VOLTAGE; CIRCUITS;

D O I：

10.1002/adma.201004278

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Top-gate organic field-effect transistors are demonstrated using a bilayer gate dielectric to propose a new compensation mechanism that leads to high operational stability. Neither changes in mobility nor threshold voltage changes are observed after 20 000 cycles of the transfer characteristics or after 24 hours under constant direct-current bias stress. These OFETs are also demonstrated to be air stable for up to 210 days.

引用

页码：1293 / +

页数：7

共 29 条

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