Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

被引：128

作者：

Kim, J. B. ^{[1
]}

Fuentes-Hernandez, C. ^{[1
]}

Potscavage, W. J., Jr. ^{[1
]}

Zhang, X. -H. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; amorphous semiconductors; atomic layer deposition; contact resistance; current density; dielectric thin films; gallium compounds; indium compounds; insulated gate field effect transistors; semiconductor thin films; thin film transistors; CONTACT RESISTANCE;

D O I：

10.1063/1.3118575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al2O3 grown by atomic layer deposition as the gate dielectric layer. The Al2O3 gate dielectric shows very small current densities and has a capacitance density of 81 +/- 1 nF/cm(2). Due to a very small contact resistance, transistors with channel lengths ranging from 100 mu m down to 5 mu m yield a channel-independent, field-effect mobility of 8 +/- 1 cm(2)/V s, subthreshold slopes of 0.1 +/- 0.01 V/decade, low threshold voltages of 0.4 +/- 0.1 V, and high on-off current ratios up to 6x10(7) (W/L=400/5 mu m) at 5 V.

引用

页数：3

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