Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

被引：294

作者：

Hsieh, Hsing-Hung ^{[1
,2
]}

Kamiya, Toshio ^{[3
,4
]}

Nomura, Kenji ^{[4
]}

Hosono, Hideo ^{[1
,3
,4
]}

Wu, Chung-Chih ^{[2
,5
,6
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, ERATO SORST, Japan Sci & Technol Agcy, Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[5] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[6] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

D O I：

10.1063/1.2857463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities. (C) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1]

[Anonymous], 2007, ATLAS US MAN

[2] Electronic density of states in amorphous selenium [J].