Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic

被引：216

作者：

Nathan, A ^{[1
]}

Kumar, A ^{[1
]}

Sakariya, K ^{[1
]}

Servati, P ^{[1
]}

Sambandan, S ^{[1
]}

Striakhilev, D ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 09期

关键词：

active matrix display; amorphous silicon; organic light emitting diode; thin film transistor;

D O I：

10.1109/JSSC.2004.829373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents design considerations along with measurement results pertinent to hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) drive circuits for active matrix organic light emitting diode (AMOLED) displays. We describe both pixel architectures and TFT circuit topologies that are amenable for vertically integrated, high aperture ratio pixels. Here, the OLED layer is integrated directly above the TFT circuit layer, to provide an active pixel area that is at least 90% of the total pixel area with an aperture ratio that remains virtually independent of scaling. Both voltage-programmed and current-programmed drive circuits are considered. The latter provides compensation for shifts in device characteristics due to metastable shifts in the threshold voltage of the TFT. Various drive circuits on glass and plastic were fabricated and tested. Integration of on-panel gate drivers is also discussed where we present the architecture of an a-Si:H based gate de-multiplexer that is threshold voltage shift invariant. In addition, a programmable current mirror with good linearity and stability is presented. Programmable current sources are. an essential requirement in the design of source driver output stages.

引用

页码：1477 / 1486

页数：10

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