Effects of ion pretreatments on the nucleation of silicon on silicon dioxide

被引：13

作者：

Basa, C ^{[1
]}

Hu, YZ ^{[1
]}

Tinani, M ^{[1
]}

Irene, EA ^{[1
]}

机构：

[1] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.581526

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low energy ion pretreatment of silicon dioxide (SiO2) surfaces results in a reduced incubation time (t(inc)) for polycrystalline silicon (poly-Si) deposition by rapid thermal chemical vapor deposition. By pretreating SiO2 surfaces with inert (He+, Ar+) and chemically active species (H+, N+), it was determined that ion pretreatments reduce t(inc), and increase the poly-Si nuclei density by creating nucleation sites via a physical damage mechanism, rather than a chemical process. (C) 1998 American Vacuum Society. [S0734-2101(98)00706-4].

引用

页码：3223 / 3226

页数：4

共 24 条

[1]

ASPNES DE, 1976, OPTICAL PROPERTIES S, P779

[2]

AUCIELLO O, 1984, BEAM MODIFICATION MA, V1

[3]

BASA CA, IN PRESS J VAC SCI A

[4] LOW-TEMPERATURE NATIVE OXIDE REMOVAL FROM SILICON USING NITROGEN TRIFLUORIDE PRIOR TO LOW-TEMPERATURE SILICON EPITAXY [J].