Integrated nanoscale silicon sensors using top-down fabrication

被引:87
作者
Elibol, OH [1 ]
Morisette, D [1 ]
Akin, D [1 ]
Denton, JP [1 ]
Bashir, R [1 ]
机构
[1] Purdue Univ, Dept Biomed Engn, Sch Elect & Comp Engn,Brick Nanotechnol Ctr, Lab Integrated Biomed Micronanotechnol & Applicat, W Lafayette, IN 47907 USA
关键词
D O I
10.1063/1.1630853
中图分类号
O59 [应用物理学];
学科分类号
摘要
Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconductor manufacturing techniques and their large scale integration is problematic. These shortcomings are addressed by recent advancements in microelectronic fabrication techniques which resulted in the realization of nanowire-like structures. Here we report a method to fabricate silicon nanowires at precise locations using such techniques. Our method allows for the realization of truly integrated sensors capable of production of dense arrays. Sensitivity of these devices to changes in the ambient gas composition is also shown. (C) 2003 American Institute of Physics.
引用
收藏
页码:4613 / 4615
页数:3
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