Stages of formation and thermal stability of a gold-n-GaN interface

被引：17

作者：

Barinov, A ^{[1
]}

Casalis, L ^{[1
]}

Gregoratti, L ^{[1
]}

Kiskinova, M ^{[1
]}

机构：

[1] Sincrotrone Trieste, I-34012 Trieste, Italy

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2001年 / 34卷 / 03期

关键词：

D O I：

10.1088/0022-3727/34/3/305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface between a thin Au film deposited on an atomically clean GaN surface has been investigated by means of synchrotron radiation scanning photoelectron microscopy. The first stages of the interface formation at room temperature and the evolution of the interface after stepwise annealing up to 870 degreesC have been studied. Our results reveal the temperature dependence of the Schottky barrier heights, caused by structural rearrangements below 500 degreesC, and by the formation of an Au gallium alloy above 500 degreesC. The effect of the reaction-induced heterogeneity of the interface on the local Schottky barriers is examined.

引用

页码：279 / 284

页数：6

共 22 条

[1]

SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].