Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN

被引:27
作者
Kim, MH [1 ]
Lee, SN
Huh, C
Park, SY
Han, JY
Seo, JM
Park, SJ
机构
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 500712, South Korea
[3] Jeonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 16期
关键词
D O I
10.1103/PhysRevB.61.10966
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interfacial reaction and Fermi-level movement, which are induced by thin and uniform Ni and Au layers, were investigated in situ using synchrotron photoemission spectroscopy. The study showed that the GaN surface layer was instantly disrupted as the result of Ni deposition, and the dissociated N and Ga were localized at the interface without the formation of any specific nitride species. The two Fermi levels of n- and p-type GaN were simultaneously located near 1.9 eV above the valence-band maximum, where the high-density gap states were generated by Ni deposition. The uniform Au layer deposited over the Ni layer tended to form an alloy with Ni as well as Ga atoms, but did not alter the band bending. A postannealing process enhanced those interfacial reactions, resulting in the segregation of Ga to the surface.
引用
收藏
页码:10966 / 10971
页数:6
相关论文
共 31 条
  • [1] [Anonymous], PHYS REV B
  • [2] GROWTH OF THIN NI FILMS ON GAN(0001)-(1X1)
    BERMUDEZ, VM
    KAPLAN, R
    KHAN, MA
    KUZNIA, JN
    [J]. PHYSICAL REVIEW B, 1993, 48 (04): : 2436 - 2444
  • [3] ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
    BINARI, SC
    DIETRICH, HB
    KELNER, G
    ROWLAND, LB
    DOVERSPIKE, K
    GASKILL, DK
    [J]. ELECTRONICS LETTERS, 1994, 30 (11) : 909 - 911
  • [4] Electronic structure of cubic gallium nitride films grown on GaAs
    Ding, SA
    Neuhold, G
    Weaver, JH
    Haberle, P
    Horn, K
    Brandt, O
    Yang, H
    Ploog, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 819 - 824
  • [5] METAL CONTACTS TO GALLIUM NITRIDE
    FORESI, JS
    MOUSTAKAS, TD
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2859 - 2861
  • [6] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL
    FREEOUF, JL
    WOODALL, JM
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729
  • [7] STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    GUO, JD
    FENG, MS
    GUO, RJ
    PAN, FM
    CHANG, CY
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2657 - 2659
  • [8] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY
    HACKE, P
    DETCHPROHM, T
    HIRAMATSU, K
    SAWAKI, N
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2676 - 2678
  • [9] Plasma preconditioning of sapphire substrate for GaN epitaxy
    Heinlein, C
    Grepstad, J
    Riechert, H
    Averbeck, R
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 253 - 257
  • [10] Effects of annealing on Ti Schottky barriers on n-type GaN
    Hirsch, MT
    Duxstad, KJ
    Haller, EE
    [J]. ELECTRONICS LETTERS, 1997, 33 (01) : 95 - 96