Spin relaxation quenching in semiconductor quantum dots

被引：393

作者：

Paillard, M

Marie, X

Renucci, P

Amand, T

Jbeli, A

Gérard, JM

机构：

[1] INSA, CNRS, Phys Mat Condensee Lab, F-31077 Toulouse, France

[2] France Telecom R&D, F-92220 Bagneux, France

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.86.1634

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the spill dynamics in self-organized InAs/GaAs quantum dots by time-resolved photoluminescence performed under strictly resonant excitation. At low temperature, He observe strictly no decay or both the linear and thr circular luminescence polarization. This demonstrates that thr carrier spins are totally frozen on the exciton lifetime scale.

引用

页码：1634 / 1637

页数：4

共 23 条

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