Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation

被引：75

作者：

Paillard, M

Marie, X

Vanelle, E

Amand, T

Kalevich, VK

Kovsh, AR

Zhukov, AE

Ustinov, VM

机构：

[1] Inst Natl Sci Appl, CNRS, Phys Mat Condensee Lab, F-31077 Toulouse, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the carrier dynamics in self-assembled InAs/GaAs quantum dots under strictly resonant excitation of the ground state. The spectral selectivity of the resonant excitation allows us to study the physical properties of a class of dots characterized by an energy distribution comparable to the excitation laser spectrum. We detect no Stokes shift of the photoluminescence (PL) line. The PL decay time yields a straightforward determination of the radiative recombination time. (C) 2000 American Institute of Physics. [S0003-6951(00)02001-5].

引用

页码：76 / 78

页数：3

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