Auger recombination in long-wavelength infrared InNxSb1-x alloys

被引:63
作者
Murdin, BN [1 ]
Kamal-Saadi, M
Lindsay, A
O'Reilly, EP
Adams, AR
Nott, GJ
Crowder, JG
Pidgeon, CR
Bradley, IV
Wells, JPR
Burke, T
Johnson, AD
Ashley, T
机构
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[3] FOM, Inst Plasma Phys, NL-3430 BE Nieuwegein, Netherlands
[4] DERA, Malvern WR14 3PS, Worcs, England
关键词
D O I
10.1063/1.1355301
中图分类号
O59 [应用物理学];
学科分类号
摘要
Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an enhanced nonparabolicity, which suppresses Auger recombination. We have measured Auger lifetimes in alloys with 11 and 15 mum absorption edges using a time-resolved pump-probe technique. We find the lifetimes to be longer at room temperature than equivalent band gap Hg1-yCdyTe alloys at the same quasi-Fermi level separation. The results are explained using a modified k.p Hamiltonian which explicitly includes interactions between the conduction band and a higher lying nitrogen-related resonant band. (C) 2001 American Institute of Physics.
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收藏
页码:1568 / 1570
页数:3
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