Investigation of iridium as a gate electrode for deep sub-micron CMOS technology

被引：9

作者：

Pawlak, MA

Schram, T

Maex, K

Vantomme, A

机构：

[1] IMEC, Silicon Proc Technol, B-3001 Louvain, Belgium

[2] Catholic Univ Louvain, Dept Phys, B-3000 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 70卷 / 2-4期

关键词：

metal gate; work function; iridium;

D O I：

10.1016/S0167-9317(03)00382-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physical and electrical properties of an Ir/SiO2/Si stack were evaluated for advanced gate electrode application. The thermal stability of the stack was studied on MOS capacitors annealed at temperatures between 500 and 1000 degreesC in N-2 ambient for 30 s followed by forming gas anneal (FGA) at 420 degreesC for 20 min. The work function of iridium, found to be 4.9 eV, is stable up to 900 degreesC, making it a good candidate as PMOS electrode. In addition, no evidence was found for any chemical reaction at the interface between Ir and SiO2. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：373 / 376

页数：4

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