Radiation damage of silicon strip detectors in the NA50 experiment

被引：2

作者：

Alessandro, B

Beolé, S

Bonazzola, G

Crescio, E

Dabrowski, W

Giubellino, P

Grybos, P

Idzik, M

Martinetto, M

Marzari-Chiesa, A

Masera, M

Prino, F

Ramello, L

Mendes, PR

Riccati, L

Sitta, M

机构：

[1] Acad Min & Met, Fac Phys & Nucl Tech, PL-30059 Krakow, Poland

[2] Ist Nazl Fis Nucl, I-10125 Turin, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 419卷 / 2-3期

关键词：

silicon strip detectors; noisy channels; radiation damage;

D O I：

10.1016/S0168-9002(98)00868-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

During operation of the multiplicity detector in the NA50 experiment the single sided AC-coupled p-on-n silicon strip detectors were exposed to charged particle fluences up to 20(14) eq n/cm(2) and ionising doses up to 20 Mrad, with a very non-uniform radiation spatial distribution. Radiation effects in the detectors observed during the '96 lead ion run as well as results of the post-run measurements are presented in this paper. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：556 / 569

页数：14

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