Submicron InP-InGaAs single he-terojunction bipolar transistors with fT of 377 GHz

被引：15

作者：

Hafez, W ^{[1
]}

Lai, JW ^{[1
]}

Feng, M ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 05期

关键词：

heterojunction bipolar transistors (HBTs);

D O I：

10.1109/LED.2003.812530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled. with a submicron emitter process. SHBTs with dimensions of 0.35 x16 mum have demonstrated a maximum current gain cutoff frequency f(T) of 377 GHz with a simultaneous maximum power gain cutoff frequency f(MAX) Of 230 GHz at the current density Jc of 650 kA/cm(2). T'ypical BVCEO values exceed 3.7 V.

引用

页码：292 / 294

页数：3

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