Comparative study of Mg doped ZnO and multilayer ZnO/MgO thin films

被引:58
作者
Bhattacharya, P [1 ]
Das, RR [1 ]
Katiyar, RS [1 ]
机构
[1] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
关键词
ZnO/MgO; multilayer deposition; bandgap;
D O I
10.1016/j.tsf.2003.07.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MgxZn1-xO (MZO) thin films were deposited from MZO targets as well as sequential deposition of ZnO/MgO multilayers on c-plane Al2O3 substrates using pulsed laser deposition. The total thickness of the films used in this study was similar to300 nm. For multilayer deposition, the thickness of each single ZnO layer was varied in the range of 0.75-2.5 nm followed with the MgO layer thickness of 1 nm. The structural transition from the hexagonal to the cubic phase was observed with the increase in Mg concentration at/above 40% from the single targets. Similar structural change was also observed with the decrease in thickness of single ZnO layer from 2.5 to 0.75 nm in multilayer deposition. The bandgap was increased with increase of Mg contents from 3.3 to 6.2 eV as well as with the change of ZnO sublayer thickness. In both cases it has not been possible to fabricate single-phase stable MZO alloys with a bandgap between 4 and 6 eV. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:564 / 567
页数:4
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