On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

被引：19

作者：

Diplas, S.

Ulyashin, A.

Maknys, K.

Gunnaes, A. E.

Jorgensen, S.

Wright, D.

Watts, J. F.

Olsen, A.

Finstad, T. G.

机构：

[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, NO-0318 Oslo, Norway

[2] Inst Energy Technol, Sect Renewable Energy, NO-2027 Kjeller, Norway

[3] Univ Oslo, Dept Phys, Oslo, Norway

[4] Univ Oslo, Dept Chem, Oslo, Norway

[5] Univ Surrey, Surface Anal Lab, Sch Engn, Guildford GU2 7XH, Surrey, England

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 24期

关键词：

ITO; magnetron sputtering; AFM; XPS; TEM;

D O I：

10.1016/j.tsf.2007.03.091

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 degrees C and 230 degrees C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8539 / 8543

页数：5

共 12 条

[1] DEGRADATION OF TIN-DOPED INDIUM-OXIDE FILM IN HYDROGEN AND ARGON PLASMA [J].