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Breakdown spots of ultra-thin (EOT<1.5 nm) HfO2/SiO2 stacks observed with enhanced -: CAFM

被引：12
作者：
Blasco, X
Nafría, M
Aymerich, X
Pétry, J
Vandervorst, W
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
[2] IMEC, B-3001 Louvain, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 5-6期
关键词：
D O I：
10.1016/j.microrel.2004.11.042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the (gate) current versus (gate) voltage (I-V) characteristics and the dielectric breakdown (BD) of an ultra-thin HfO2/SiO2 stack is studied by enhanced conductive atomic force microscopy (ECAFM). The ECAFM is a CAFM with extended electrical performance. Using this new set up, different conduction modes have been observed before BD. The study of the BD spots has revealed that, as for SiO2, the BD of the stack leads to modifications in the topography images and high conductive spots in the current images. The height of the hillocks observed in the topography images has been considered an indicator of structural damage. (c) 2004 Elsevier Ltd. All rights reserved.
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收藏
页码：811 / 814
页数：4
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