X-ray stability and response of polymeric photodiodes for imaging applications

被引：65

作者：

Keivanidis, Panagiotis E. ^{[1
]}

Greenham, Neil C. ^{[1
]}

Sirringhaus, Henning ^{[1
]}

Friend, Richard H. ^{[1
]}

Blakesley, James C. ^{[2
]}

Speller, Robert ^{[2
]}

Campoy-Quiles, Mariano ^{[3
]}

Agostinelli, Tiziano ^{[3
]}

Bradley, Donal D. C. ^{[3
]}

Nelson, Jenny ^{[3
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] UCL, Dept Med Phys & Bioengn, London WC1E 6BT, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BW, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2834364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The x-ray stability of photodiodes made of poly(9,9-di-n-octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di-n-octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]:perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. (c) 2008 American Institute of Physics.

引用

页数：3

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