X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications

被引：18

作者：

Devine, RAB

Ling, MM

Mallik, AB

Roberts, M

Bao, Z

机构：

[1] AFRL VSSE, Kirtland AFB, NM 87117 USA

[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2194894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Preliminary studies of the effect of x-ray irradiation, typically used to simulate radiation effects in space, on top contact, pentacene based field effect transistors have been carried out. Threshold voltage shifts in irradiated devices are consistent with positive charge trapping in the gate dielectric and a rebound effect is observed, independent of the sign of applied electric field during irradiation. Carrier mobility variations in positive electric field biased/irradiated devices are interpreted in terms of the effects of interface-state-like defects.

引用

收藏

页数：3

相关论文

共 12 条

[1] Interfacial hardness enhancement in deuterium annealed 0.25 mu m channel metal oxide semiconductor transistors [J].

Devine, RAB ;

Autran, JL ;

Warren, WL ;

Vanheusdan, KL ;

Rostaing, JC .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2999-3001

[2] Low-voltage electron microscopy of polymer and organic molecular thin films [J].

Drummy, LF ;

Yang, JY ;

Martin, DC .

ULTRAMICROSCOPY, 2004, 99 (04) :247-256

[3] Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].

Knipp, D ;

Street, RA ;

Völkel, A ;

Ho, J .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355

[4] Bias-dependent generation and quenching of defects in pentacene [J].

Lang, DV ;

Chi, X ;

Siegrist, T ;

Sergent, AM ;

Ramirez, AP .

PHYSICAL REVIEW LETTERS, 2004, 93 (07) :076601-1

[5] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

MCWHORTER, PJ ;

WINOKUR, PS .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :133-135

[6] Modeling of organic thin film transistors of different designs [J].

Necliudov, PV ;

Shur, MS ;

Gundlach, DJ ;

Jackson, TN .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6594-6597

[7] Gap states in organic semiconductors: Hydrogen- and oxygen-induced states in pentacene [J].

Northrup, JE ;

Chabinyc, ML .

PHYSICAL REVIEW B, 2003, 68 (04)

[8] EFFECT OF HIGH-TEMPERATURE PROCESSING OF SI/SIO2/SI STRUCTURES ON THEIR RESPONSE TO X-RAY-IRRADIATION [J].

PAILLET, P ;

HERVE, D ;

LERAY, JL ;

DEVINE, RAB .

APPLIED PHYSICS LETTERS, 1993, 63 (15) :2088-2090

[9] Electronic transport in field-effect transistors of sexithiophene [J].

Stallinga, P ;

Gomes, HL ;

Biscarini, F ;

Murgia, M ;

de Leeuw, DM .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) :5277-5283

[10] Bipolaron mechanism for bias-stress effects in polymer transistors [J].

Street, RA ;

Salleo, A ;

Chabinyc, ML .

PHYSICAL REVIEW B, 2003, 68 (08)