Evolution of leakage paths in HfO2/SiO2 stacked gate dielectrics:: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy -: art. no. 063510

被引：25

作者：

Kyuno, K ^{[1
]}

Kita, K ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 06期

关键词：

D O I：

10.1063/1.1862779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A conducting atomic force microscopy (C-AFM) in ultrahigh vacuum (UHV) is used to directly observe the evolution of leakage path in HfO2/SiO2 stacked gate dielectrics. Thanks to the UHV environment, reproducible results for both positive and negative tip biases are obtained without material formation on the surface, which has been a problem for atmospheric C-AFM. It is found that the density of leakage spots increases exponentially as a function of tip bias and that it is a large factor for leakage current increase. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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