Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy

被引：58

作者：

Watanabe, H ^{[1
]}

Fujita, K ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Natl Inst Interdisciplinary Res, Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used scanning tunneling microscopy (STM) to investigate the local leakage current through ultrathin silicon dioxide (SiO2) films grown on Si substrates. Individual leakage sites, which were coated by hot-electron injection from the STM tip under a high sample bias of +10 V, were identified from the local change in surface conductivity due to defect creation in the oxide films. When we reversed the stressing polarity (using a negative sample bias) no leakage sites were created in the oxide film. (C) 1998 American Institute of Physics.

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页码：1987 / 1989

页数：3

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