Structure and hydrogen content of stable hot-wire-deposited amorphous silicon

被引：18

作者：

Brockhoff, AM ^{[1
]}

Ullersma, EHC ^{[1
]}

Meiling, H ^{[1
]}

Habraken, FHPM ^{[1
]}

van der Weg, WF ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 22期

关键词：

D O I：

10.1063/1.122732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistors incorporating a hot-wire chemical-vapor-deposited silicon layer have been shown to exhibit superior electronic stability as compared to glow-discharge-deposited amorphous silicon devices. Hot-wire-deposited silicon films of various thicknesses (37-370 nm) on silicon dioxide were investigated. The films are structurally inhomogeneous. Raman measurements and transmission electron microscopy show that isolated cone-shaped crystals grow within a primarily amorphous layer. The amorphous interface region has a low hydrogen content of 2.0 +/- 0.2 at. %, while the films exhibit an enhanced hydrogen concentration in the surface region. The bond-angle distribution in the amorphous phase is comparable to that of device-quality glow-discharge-deposited amorphous silicon. (C) 1998 American Institute of Physics. [S0003-6951(98)01848-8].

引用

页码：3244 / 3246

页数：3

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