Structural and electronic properties of ZnMgO/ZnO quantum wells

被引：32

作者：

Morhain, C ^{[1
]}

Tang, X ^{[1
]}

Teisseire-Doninelli, M ^{[1
]}

Lo, B ^{[1
]}

Laügt, M ^{[1
]}

Chauveau, JM ^{[1
]}

Vinter, B ^{[1
]}

Tottereau, O ^{[1
]}

Vennéguès, P ^{[1
]}

Deparis, C ^{[1
]}

Neu, G ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2005年 / 38卷 / 4-6期

关键词：

D O I：

10.1016/j.spmi.2005.08.055

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hi h-quality ZnM-O/ZnO quantum wells (QWs) showing no phase separation were grown on Al2O3(0001). Growth temperature was shown to play a major role in the stabilisation in the wurtzite phase of ZnMgO barrier layers as well as in their Surface morphology. Such effects were seen in X-ray diffraction, RHEED, AFM and PL Studies. Whereas the electronic propel-ties of the narrow QWs are governed by quantum confinement effects with excitonic emission energies above that of ZnO, the electronic properties of wider QWs (>3 nm) are governed by the quantum confined Stark effect and can therefore emit several hundreds of meV below the band gal) of ZnO. This is a direct consequence of the very large built-in electric field of about 1 MV/crn developed in ZnMgO/ZnO QWs grown along the c-direction. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：455 / 463

页数：9

共 7 条

[1] Excitonic transitions in ZnO/MgZnO quantum well heterostructures [J].