Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

被引：130

作者：

Zhang, BP ^{[1
]}

Binh, NT

Wakatsuki, K

Liu, CY

Segawa, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1850594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO/MgZnO single quantum wells (QWs) in which the well width changes continuously were grown on sapphire (1120) substrates by metalorganic chemical vapor deposition. Photoluminescence (PL) measurement revealed two emission peaks: one is position dependent and the other is not. Polarized PL spectra obtained from cleaved facets demonstrated perfect two-dimensional features of the position-dependent emission peak. The position-dependent peak was attributed to emissions due to excitons confined in the ZnO well layer, and the position-independent peak was attributed to emissions due to excitons in MgZnO barrier layers. The width dependence of the emission energy from the ZnO QW was interpreted by a simple theoretical model. Typical PL decay time of the QW emission was 360 ps at 77 K. It was shorter than that of the MgZnO barrier, 470 ps, due to the enhanced confinement effect in the QW. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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