40,000 pixel arrays of ac-excited silicon microcavity plasma devices

被引:24
作者
Park, SJ [1 ]
Chen, KF [1 ]
Ostrom, NP [1 ]
Eden, JG [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Lab Opt Phys & Engn, Urbana, IL 61801 USA
关键词
D O I
10.1063/1.1880441
中图分类号
O59 [应用物理学];
学科分类号
摘要
Arrays of (50 mu m)(2) Si microcavity plasma devices, as large as 40 000 pixels (200x200) with a packing density of 10(4) pixels cm(-2), have been operated continuously in 500-900 Torr of Ne with ac excitation (5-20 kHz). More than two orders of magnitude larger than previously reported microplasma device arrays, 200x200 pixel structures produce uniform glow discharges in each pixel, have a power consumption of similar to 0.85 W cm(-2) for p(Ne)=700 Torr and an excitation frequency of 5 kHz, and exhibit maximum radiative efficiency for a Ne pressure of p(Ne)congruent to 700 Torr and an excitation frequency of 10-15 kHz. All arrays examined (10x10 -> 200x200) are characterized by pixel-to-pixel emission intensities constant over the entire array to within +/- 10%, and no barriers to the successful operation of much larger arrays are apparent. (C) 2005 American Institute of Physics.
引用
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页码:1 / 3
页数:3
相关论文
共 4 条
[1]   Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors [J].
Eden, JG ;
Park, SJ ;
Ostrom, NP ;
McCain, ST ;
Wagner, CJ ;
Vojak, BA ;
Chen, J ;
Liu, C ;
von Allmen, P ;
Zenhausern, F ;
Sadler, DJ ;
Jensen, C ;
Wilcox, DL ;
Ewing, JJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (23) :2869-2877
[2]   Arrays of silicon microdischarge devices with multicomponent dielectrics [J].
Park, SJ ;
Eden, JG ;
Chen, J ;
Liu, C ;
Ewing, JJ .
OPTICS LETTERS, 2001, 26 (22) :1773-1775
[3]   Silicon microdischarge devices having inverted pyramidal cathodes: Fabrication and performance of arrays [J].
Park, SJ ;
Chen, J ;
Liu, C ;
Eden, JG .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :419-421
[4]   High-pressure micro-discharges in etching and deposition applications [J].
Sankaran, RM ;
Giapis, KP .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (23) :2914-2921