Arrays of silicon microdischarge devices with multicomponent dielectrics

被引：18

作者：

Park, SJ ^{[1
]}

Eden, JG

Chen, J

Liu, C

Ewing, JJ

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Lab Opt Phys & Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA

[3] Ewing Technol Associates, Bellevue, WA 98006 USA

来源：

OPTICS LETTERS | 2001年 / 26卷 / 22期

关键词：

D O I：

10.1364/OL.26.001773

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Arrays as large as 15 x 15 of microdischarge devices having inverted pyramidal silicon cathodes (50 mum x 50 mum) and SiO2-Si3N4-polymer composite dielectrics have been fabricated and characterized with Ne gas. The lifetimes, reliability, and ignition characteristics of the arrays are superior to those of earlier designs having a single polymer dielectric. Operating voltages as low as 150 V for a 10 x 10 pixel array and 1000 Torr of Ne have been measured. Single (50 mum x 50 mum) pyramidal cathode devices operate at voltages as low as 113 V when the Ne pressure is 900 Torr. (C) 2001 Optical Society of America.

引用

页码：1773 / 1775

页数：3

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