Oxygen-Aided Synthesis of Polycrystalline Graphene on Silicon Dioxide Substrates

被引：307

作者：

Chen, Jianyi ^{[1
]}

Wen, Yugeng ^{[1
]}

Guo, Yunlong ^{[1
]}

Wu, Bin ^{[1
]}

Huang, Liping ^{[1
]}

Xue, Yunzhou ^{[1
]}

Geng, Dechao ^{[1
]}

Wang, Dong ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2011年 / 133卷 / 44期

基金：

中国国家自然科学基金;

关键词：

WALLED CARBON NANOTUBES; LARGE-AREA; TRANSPARENT; GROWTH; FILMS; OXIDE;

D O I：

10.1021/ja2063633

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the metal-catalyst-free synthesis of high-quality polycrystalline graphene on dielectric substrates [silicon dioxide (SiO2) or quartz] using an oxygen-aided chemical vapor deposition (CVD) process. The growth was carried out using a CVD system at atmospheric. pressure. After high-temperature activation of the growth substrates in air, high quality polycrystalline graphene is subsequently grown on SiO2 by utilizing the oxygen-based nucleation sites. The growth mechanism is analogous to that of growth for single-walled carbon nanotubes. Graphene-modified SiO2 substrates can be directly used in transparent conducting films and field-effect devices. The carrier mobilities are about 531 cm(2) V-1 s(-1) in air and 472 cm(2) V-1 s(-1) in N-2, which are dose to that of metal-catalyzed polycrystalline graphene. The method avoids the need for either a metal catalyst or a complicated and skilled postgrowth transfer process and is compatible with current silicon processing techniques.

引用

页码：17548 / 17551

页数：4

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