Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy

被引：87

作者：

Hackley, J. ^{[1
]}

Ali, D. ^{[1
]}

DiPasquale, J. ^{[1
]}

Demaree, J. D. ^{[2
]}

Richardson, C. J. K. ^{[1
]}

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

[2] USA, Res Lab, Aberdeen Proving Ground, MD 21005 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期

关键词：

GRAPHENE; FILMS; TEMPERATURE; SI;

D O I：

10.1063/1.3242029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid source molecular beam epitaxy is used to explore the growth of carbon films directly on Si(111). It is shown that graphitic carbon is grown by the implementation of a thin amorphous carbon film that suppresses the formation of SiC precipitates. Raman scattering measurements show the D and G vibrational phonon modes, indicating graphitic ordering in the carbon film. X-ray photoelectron spectroscopy is used to verify the formation of sp2 bonds in the graphitic carbon films and confirms the suppression of SiC. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242029]

引用

页数：3

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