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A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

被引：11
作者：
Kaiser, U
Newcomb, SB
Stobbs, WM
Adamik, M
Fissel, A
Richter, W
机构：
[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[3] Tech Phys Res Inst, H-1325 Budapest, Hungary
来源：
JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 12期
关键词：
D O I：
10.1557/JMR.1998.0486
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of different growth parameters on the microstructure of the SIC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-900 degrees C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si:C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.
引用
收藏
页码：3571 / 3579
页数：9
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