A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

被引：11

作者：

Kaiser, U

Newcomb, SB

Stobbs, WM

Adamik, M

Fissel, A

Richter, W

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] Tech Phys Res Inst, H-1325 Budapest, Hungary

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 12期

关键词：

D O I：

10.1557/JMR.1998.0486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of different growth parameters on the microstructure of the SIC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-900 degrees C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si:C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

引用

页码：3571 / 3579

页数：9

共 23 条

[11]

Hetherington CJD, 1995, INST PHYS CONF SER, V147, P389

[12] THE GROWTH OF SINGLE-CRYSTAL OF 3C-SIC ON THE SI SUBSTRATE BY THE MBE METHOD USING MULTI ELECTRON-BEAM HEATING [J].