Structural and optical properties of pseudomorphic InxGa1-xN alloys

被引：62

作者：

Romano, LT

Krusor, BS

McCluskey, MD

Bour, DP

Nauka, K

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[2] Hewlett Packard Labs, Palo Alto, CA 94303 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thick (225 nm) InxGa1-xN layers, grown on 5 mu m thick GaN, were found by x-ray diffraction mm (XRD) measurements to be pseudomorphic up to x = 0.114. Transmission electron microscopy showed that no misfit or additional threading dislocations were created at the InxGa1-xN/GaN interface. Composition of the overlayers was determined by Rutherford backscattering spectrometry and correlated to both the a and c lattice constants from XRD. It was found that Vegard's law is applicable at these compositions, if the biaxial strain is included. Biaxial strain must also be considered to accurately determine the bowing parameter as shown by optical transmission measurements. (C) 1998 American Institute of Physics. [S0003-6951(98)00539-7].

引用

页码：1757 / 1759

页数：3

共 15 条

[1]

[Anonymous], 1970, Crystallography and Crystal Defects

[2] Solid phase immiscibility in GaInN [J].