Dynamics of partial dislocations in silicon

被引:7
作者
Hansen, LB
Stokbro, K
Lundqvist, BI
Jacobsen, KW
机构
[1] GOTHENBURG UNIV, S-41296 GOTHENBURG, SWEDEN
[2] SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY
[3] TECH UNIV DENMARK, CAMP, DK-2800 LYNGBY, DENMARK
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 37卷 / 1-3期
关键词
silicon; partial dislocations;
D O I
10.1016/0921-5107(95)01483-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic-scale calculations for the dynamics of the 90 degrees partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are compared with experimental results for the mobility of this dislocation. The results confirm the theory that the partial moves in the dissociated state via the formation of stable kinks. The correlation between glide activation energy and band gap in semiconducting systems is discussed.
引用
收藏
页码:185 / 188
页数:4
相关论文
共 18 条
[1]  
Andersen O.K., 1986, Electronic band structure and its applications, DOI DOI 10.1007/3540180982_1
[2]   ATOMIC AND ELECTRONIC-STRUCTURES OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON [J].
BIGGER, JRK ;
MCINNES, DA ;
SUTTON, AP ;
PAYNE, MC ;
STICH, I ;
KINGSMITH, RD ;
BIRD, DM ;
CLARKE, LJ .
PHYSICAL REVIEW LETTERS, 1992, 69 (15) :2224-2227
[3]   OPTIMIZED AND TRANSFERABLE DENSITIES FROM 1ST-PRINCIPLES LOCAL DENSITY CALCULATIONS [J].
CHETTY, N ;
JACOBSEN, KW ;
NORSKOV, JK .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (28) :5437-5443
[4]   DISLOCATION DISSOCIATION WIDTHS IN SILICON AT LOW-TEMPERATURE UNDER CONTROLLED HIGH-STRESS ORIENTATIONS [J].
DEMENET, JL ;
GROSBRAS, P ;
GAREM, H ;
DESOYER, JC .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (03) :501-518
[5]  
DUESBEERY MS, 1991, CRC CRIT REV SOLID S, V17
[6]   DISLOCATION CORE STUDIES IN EMPIRICAL SILICON MODELS [J].
DUESBERY, MS ;
JOOS, B ;
MICHEL, DJ .
PHYSICAL REVIEW B, 1991, 43 (06) :5143-5146
[7]  
FARBER BY, 1986, SOV PHYS JETP
[8]  
GEORGE A, 1987, REV PHYS APPL, V22, P207
[9]   WHY SILICON IS HARD [J].
GILMAN, JJ .
SCIENCE, 1993, 261 (5127) :1436-1439
[10]   CONSTRICTED DISLOCATIONS AND THEIR USE FOR TEM MEASUREMENTS OF THE VELOCITIES OF EDGE AND 60-DEGREES DISLOCATIONS IN SILICON - A NEW APPROACH TO THE PROBLEM OF KINK MIGRATION [J].
GOTTSCHALK, H ;
HILLER, N ;
SAUERLAND, S ;
SPECHT, P ;
ALEXANDER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (02) :547-555