Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition

被引：7

作者：

Fonrodona, M ^{[1
]}

Soler, D ^{[1
]}

Bertomeu, J ^{[1
]}

Andreu, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, E-08028 Barcelona, Catalonia, Spain

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

catalytic chemical vapour deposition; nanocrystalline silicon; amorphous silicon; doping efficiency;

D O I：

10.1016/S0040-6090(01)01230-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the region of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, both for n and p doping, and electrical characteristics similar to those of plasma-deposited films. The doping efficiency of n-type amorphous silicon is similar to that obtained for plasma-deposited electronic-grade amorphous silicon, whereas p-type layers show a doping efficiency of one order of magnitude lower. A higher deposition temperature of 450 degreesC was required to achieve p-type films with electrical characteristics similar to those of plasma-deposited films. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 129

页数：5

共 14 条

[1]

[Anonymous], 1981, PHYS SEMICONDUCTOR D

[2] Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron [J].