Microcrystalline silicon thin film transistors obtained by hot-wire CVD

被引：15

作者：

Puigdollers, J

Dosev, D

Orpella, A

Vox, C

Peiro, D

Bertomeu, J

Marsal, LF

Pallares, J

Andreu, J

Alcubilla, R

机构：

[1] Univ Politecn Catalunya, Dept Elect Engn, ES-08034 Barcelona, Spain

[2] Univ Rovira & Virgili, Dept Elect Engn, Barcelona, Spain

[3] Univ Barcelona, Dept Fis Aplicada & Opt, Barcelona, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

microcrystalline silicon; hot-wire CVD; thin film transistors;

D O I：

10.1016/S0921-5107(99)00252-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD. Some results concerned with the structural characterization of the material and electrical performance of the device are presented. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：526 / 529

页数：4

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