High deposition rate of polycrystalline silicon thin films prepared by hot wire cell method

被引:21
作者
Ichikawa, M [1 ]
Takeshita, J [1 ]
Yamada, A [1 ]
Konagai, H [1 ]
机构
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 152, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期
关键词
hot wire cell method; amorphous silicon; polysilicon; thin-film deposition; low-temperature deposition;
D O I
10.1143/JJAP.38.L24
中图分类号
O59 [应用物理学];
学科分类号
摘要
The hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9-1.1 nm/s. In the HW cell method, mono silane (SiH4) is decomposed by reacting with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175-400 degrees C without hydrogen dilution when the deposition pressure is 0.1 Torr.
引用
收藏
页码:L24 / L26
页数:3
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