Fundamental limits of silicon technology

被引:122
作者
Keyes, RW [1 ]
机构
[1] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA
关键词
electronic devices; integrated circuits; scaling; silicon technology; wiring;
D O I
10.1109/5.915372
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measures of the performance of digital electronics have increased steadily for four decades. The essential ingredient of progress has been miniaturization. The road to advances beyond a decade into the future has always been obscure and has stimulated much speculation as to where miniaturization must end Thus Sur new ideas have regularly met the challenges posed by new problems and have allowed the trends to continue. The persistance of silicon as the basis of information technology is the one constant. The problems and solutions arising from changing physics caused by miniaturization are examined in the perspective of the environment in which millions of closely packed devices must function and the external world that information processing technology sen es. The complex structure of devices offers considerable room for ingenuity and novel approaches. The large number of devices collected on a single chip of silicon must communicate with one another via a complex array of wires. Miniaturization of the wires poses a different set of questions. The simple structure of a wire offers less scope for invention than is possible with del ices and it is more difficult to see solutions to problems. Nevertheless, as has happened in the past, it is difficult to find obviously insuperable barriers to progress in fundamental physics.
引用
收藏
页码:227 / 239
页数:13
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