Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD

被引：83

作者：

Zhong, GF ^{[1
]}

Iwasaki, T ^{[1
]}

Honda, K ^{[1
]}

Furukawa, Y ^{[1
]}

Ohdomari, I ^{[1
]}

Kawarada, H ^{[1
]}

机构：

[1] Waseda Univ, Sch Sci, Shinjuku Ku, Tokyo 1698555, Japan

来源：

CHEMICAL VAPOR DEPOSITION | 2005年 / 11卷 / 03期

关键词：

D O I：

10.1002/cvde.200404197

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A very high yield growth of extremely dense and vertically aligned single-walled carbon nanotubes (SWNT) by Point-Arc Microwave plasma CVD were analyzed. It was observed that SWNT film thickness increases continuously with the growth time, suggesting an almost unlimited life time for the catalyst. Thin top Al2O3 coating plays a very important role in the aligned growth of extremely dense SWNTs. The point-arc MPCVD method is preferable for controlled growth of SWNTs at a low temperature on Si substrates coated with a sandwich-like coating structure.

引用

页码：127 / 130

页数：4

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