Optical bands related to dislocations in Si

被引：15

作者：

Blumenau, AT ^{[1
]}

Jones, R

Öberg, S

Frauenheim, T

Briddon, PR

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Gesamthsch Paderborn, D-33095 Paderborn, Germany

[3] Lulea Univ Technol, Dept Math, S-97187 Lulea, Sweden

[4] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 49期

关键词：

D O I：

10.1088/0953-8984/12/49/311

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

First-principles calculations are used to investigate the interaction of self-interstitial aggregates with the 90 degrees partial dislocation in Si. We find that I-4 is bound to the line with an energy of around 3 eV. The defect causes deep levels to appear in the band gap and optical transitions between these levels may account for the luminescent bands relating to plastically deformed Si.

引用

页码：10123 / 10129

页数：7

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