Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

被引：5

作者：

Batson, PE ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

dislocations; electronic structure; EELS; GeSi;

D O I：

10.1016/S0921-4526(99)00581-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A dissociated 60 degrees misfit dislocation at the substrate interface of a Si/Ge(x)Si((1-x)) heterojunction has been examined using EELS and ADF imaging. New spectra are obtained at the intrinsic stacking fault, at the dislocation cores and in the strained regions on either side of the stacking fault. A splitting of the L(1) conduction band due to symmetry breaking at the stacking fault is observed. Near edge conduction band states are verified at the partial dislocation cores, but not at the stacking fault. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：593 / 597

页数：5

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