Interstitial aggregates and a new model for the I1/W optical centre in silicon

被引:72
作者
Coomer, BJ [1 ]
Goss, JP
Jones, R
Öberg, S
Briddon, PR
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Lulea, Dept Math, S-97187 Lulea, Sweden
[3] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
silicon; W-line; interstitial; aggregation;
D O I
10.1016/S0921-4526(99)00538-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
First principles local-density-functional (LDF) theory is employed to investigate the properties of di-interstitial (I-2), tri-interstitial (I-3) and tetra-interstitial (I-4) structures in silicon. We show that a tri-interstitial defect can account for many of the fundamental properties of the I-1/W-optical centre which is observed in irradiated, annealed silicon. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:505 / 508
页数:4
相关论文
共 23 条
[1]  
ARIA N, 1997, PHYS REV LETT, V78, P4265
[2]  
BONGIORNO A, 1998, ICPS 21 C P JER
[3]  
COOMER BJ, 1999, PHYSICA B, V273, P518
[4]   THE 1018 MEV (W OR I1) VIBRONIC BAND IN SILICON [J].
DAVIES, G ;
LIGHTOWLERS, EC ;
CIECHANOWSKA, ZE .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02) :191-205
[5]   Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence line [J].
Estreicher, SK ;
Weber, J ;
DerecskeiKovacs, A ;
Marynick, DS .
PHYSICAL REVIEW B, 1997, 55 (08) :5037-5044
[6]  
ESTREICHER SK, 1999, HYDR 99 WORKSH EX U
[7]   Annealing of the photoluminescence W-center in proton-irradiated silicon [J].
Feick, H ;
Weber, ER .
PHYSICA B-CONDENSED MATTER, 1999, 273-4 :497-500
[8]   Migration energy for the silicon self-interstitial [J].
Hallén, A ;
Keskitalo, N ;
Josyula, L ;
Svensson, BG .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :214-216
[9]   Optically active hydrogen dimers in silicon [J].
Hourahine, B ;
Jones, R ;
Safonov, AN ;
Öberg, S ;
Briddon, PR ;
Estreicher, SK .
PHYSICA B-CONDENSED MATTER, 1999, 273-4 :176-179
[10]  
Jones R, 1998, SEMICONDUCT SEMIMET, V51, P287