THE 1018 MEV (W OR I1) VIBRONIC BAND IN SILICON

[1] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (18) : 1645 - 1648

[2] UNIAXIAL-STRESS MEASUREMENTS ON THE 1039.8 MEV ZERO-PHONON LINE IN IRRADIATED SILICON [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (05) : 427 - 431

[3] PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1295 - 1297

[4] ESHELBY JD, 1956, SOLID STATE PHYS, V3, P79

[5] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11): : 1265 - +

[6] UNIAXIAL STRESS SPLITTING OF DOUBLY DEGENERATE STATES OF TETRAGONAL AND TRIGONAL CENTRES IN CUBIC CRYSTALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P): : 827 - &

[7] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[8] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106

[9] LINEAR THERMAL-EXPANSION MEASUREMENTS ON SILICON FROM 6 TO 340 K [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 865 - 868

[10] Maradudin AA, 1966, SOLID STATE PHYS, V18, P273

[1] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (18) : 1645 - 1648

[2] UNIAXIAL-STRESS MEASUREMENTS ON THE 1039.8 MEV ZERO-PHONON LINE IN IRRADIATED SILICON [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (05) : 427 - 431

[3] PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1295 - 1297

[4] ESHELBY JD, 1956, SOLID STATE PHYS, V3, P79

[5] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (11): : 1265 - +

[6] UNIAXIAL STRESS SPLITTING OF DOUBLY DEGENERATE STATES OF TETRAGONAL AND TRIGONAL CENTRES IN CUBIC CRYSTALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 90 (569P): : 827 - &

[7] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[8] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02): : 97 - 106

[9] LINEAR THERMAL-EXPANSION MEASUREMENTS ON SILICON FROM 6 TO 340 K [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 865 - 868

[10] Maradudin AA, 1966, SOLID STATE PHYS, V18, P273