X-ray generation enhancement from a laser-produced plasma with a porous silicon target

被引:63
作者
Nishikawa, T [1 ]
Nakano, H [1 ]
Ahn, H [1 ]
Uesugi, N [1 ]
Serikawa, T [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO 180, JAPAN
关键词
D O I
10.1063/1.118660
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray generation enhancement from a laser-produced plasma with a porous Si target is reported. For a porous surface formed on a Si wafer, the self-reflectivity of a femtosecond pulse becomes considerably small. The observed energy penetration depth is 25-30 mu m, which is much larger than the skin depth of solid density matter. Using a porous Si target, the threshold of the pre-pulse intensity required for soft x-ray emission enhancement can be reduced. It also contributes to enhance the pre-pulse effect, and soft x-ray generation enhancement ranging from 1.6 to 6.5 times is observed depending on the pre-pulse intensity. (C) 1997 American Institute of Physics.
引用
收藏
页码:1653 / 1655
页数:3
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