Thermal stability of emitter ballasted HBT's

被引：22

作者：

Adlerstein, MG ^{[1
]}

机构：

[1] Raytheon Elect, Adv Device Ctr, Andover, MA 01810 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

ballast resistors; GaAs; HBT; power transistors; thermal stability;

D O I：

10.1109/16.704359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT's), An expression is presented for the value of emitter ballast resistor needed to stabilze the transistor. The result leads to a stability diagram on the current-voltage (I-V) plane which aids in the selection of emitter ballast resistors.

引用

页码：1653 / 1655

页数：3

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