1 W KU-BAND ALGAAS/GAAS POWER HBTS WITH 72-PERCENT PEAK POWER-ADDED EFFICIENCY

被引：17

作者：

SHIMURA, T

SAKAI, M

IZUMI, S

NAKANO, H

MATSUOKA, H

INOUE, A

UDOMOTO, J

KOSAKI, K

KURAGAKI, T

TAKANO, H

SONODA, T

TAKAMIYA, S

机构：

[1] Mitsubishi Electric Corporation, Itami

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 11期

关键词：

D O I：

10.1109/16.469393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT's) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 mu m(2). 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band.

引用

页码：1890 / 1896

页数：7

共 14 条

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