THEORETICAL CALCULATIONS OF TEMPERATURE AND CURRENT PROFILES IN MULTI-FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：42

作者：

LIU, W

BAYRAKTAROGLU, B

机构：

[1] Central Research Laboratories, Texas Instruments, P.O. Box 655936, M/S 134, Dallas

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期

关键词：

D O I：

10.1016/0038-1101(93)90130-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical analysis is presented to determine both the temperature profile and current distribution among the fingers for a multi-finger heterojunction bipolar transistor designed for microwave power applications. This analysis allows for arbitrary transistor geometries and non-uniform emitter ballast resistors in the fingers. The effects of varying ballast resistances, emitter width, emitter length, and spacing between the fingers will be discussed.

引用

页码：125 / 132

页数：8

共 12 条

[1]

Acton F.S., 1970, NUMERICAL METHODS WO

[2]

ALBERS J, 1984, NBS40076 SPEC PUB

[3] QUANTITATIVE STUDY OF EMITTER BALLASTING [J].