Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

Deep traps in undoped n-GaN layers grown by organometallic vapor phase epitaxy on sapphire substrates were studied by temperature dependent conductivity, photoinduced current transient spectroscopy (PICTS), thermally stimulated current, electron beam induced current (EBIC), and band edge cathodoluminescence (CL) methods. Presence of electron traps with energy levels 0.1-0.2 eV below the conduction band and hole traps with energy levels of about 0.25, 0.5, and 0.85 eV above the valence band edge was detected. CL and EBIC measurements show that the deep recombination centers in GaN are distributed inhomogeneously with well defined cellular pattern. Both carrier Lifetime and luminescence intensity are enhanced at cell walls indicating lower density of recombination centers. However, the density of main hole trap (0.85 eV) is enhanced in these regions as determined by local PICTS measurements. Photoconductivity in many GaN samples exhibits very long decay times at temperatures between 100 and 300 K. The effect most probably is not related to shallow donors such as silicon, but rather is associated with unidentified deep centers with a 0.2 eV barrier for electron capture. (C) 1998 American Institute of Physics. [S0021-8979(98)01314-0].