HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP

被引：25

作者：

GORBYLEV, VA

CHELNIY, AA

POLYAKOV, AY

PEARTON, SJ

SMIRNOV, NB

WILSON, RG

MILNES, AG

CNEKALIN, AA

GOVORKOV, AV

LEIFEROV, BM

BORODINA, OM

机构：

[1] MOSCOW RARE MET INST,MOSCOW 109017,RUSSIA

[2] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

[3] HUGHES RES LABS,MALIBU,CA 90265

[4] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

[5] PATRICE LUMUMBA PEOPLES FRIENDSHIP UNIV,MOSCOW 117198,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.357964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of hydrogen treatment on electrical properties, luminescence spectra, and deep traps in InGaAlP and InGaP have been studied. It is shown that acceptors and donors (both shallow and deep) can be effectively passivated by hydrogen. The hydrogen is found not only to passivate the main electron and hole traps in our samples, but also to generate electron traps in n-InGaAlP and hole traps in p-InGaP. The influence of hydrogen treatment mode (direct plasma or a crossed-beams source in which the low-energy ion bombardment of the surface is effectively eliminated) on hydrogen concentration and hydrogen profiles in InGaAlP are discussed. © 1994 American Institute of Physics.

引用

页码：7390 / 7398

页数：9

共 14 条

[1] PASSIVATION OF GAAS BY ATOMIC-HYDROGEN FLOW PRODUCED BY THE CROSSED BEAMS METHOD [J].