EFFECT OF SUBSTRATE ORIENTATION ON ZN-DOPING OF ALGAINP GROWN BY ATMOSPHERIC-PRESSURE ORGAMOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

MINAGAWA, S

KONDOW, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Tokyo, 185, 1-280 Kigashikoigakubo, Kokubunji

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 06期

关键词：

AIGalnP; OMVPE; Zn-doping;

D O I：

10.1007/BF02651284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dependence of hole concentration of p(Zn) - (Al0.6Ga0.4In0.5P on substrate orientation was examined. It increases with tilting the substrate from (100) towards (511)A. Addition of an n-GaAs cap layer on top of the quaternary increases hole concentration while a p-GaAs cap shows little effect. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：597 / 599

页数：3

共 6 条

[1] ANOMALOUS BEHAVIOR OF DOPANTS IN ATMOSPHERIC-PRESSURE MOVPE OF INP [J].