Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique

被引：30

作者：

Lee, JK ^{[1
]}

Jung, HJ ^{[1
]}

Auciello, O ^{[1
]}

Kingon, AI ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.580411

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on the platinized silicon substrate. The surface roughness of the deposited film was an average of 4 nm. The titanium element was diffused to the SrBi2Ta2O9 layer through the platinum layer. P-E hysteresis loop for the Pt/SrBi2Ta2O9/Pt/Ti capacitor was well saturated and symmetric (P-r = 3 mu C/cm(2), E(c) = 25 kV/cm). (C) 1996 American Vacuum Society.

引用

页码：900 / 904

页数：5

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