Evaluation of NBTI in HfO2 gate-dielectric stacks with tungsten gates

被引：50

作者：

Zafar, S ^{[1
]}

Lee, YH

Stathis, J

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Semicond Res & Dev Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Semicond Res & Dev Ctr, Adv Semicond Technol Alliance, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

Hafnium oxide; high-K gate dielectric; metal gate; electrode; negative-bias temperature instability (NBTI);

D O I：

10.1109/LED.2004.824244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative-bias temperature instability (NBTI) of the threshold voltage in ultrathin HfO2 p-type field-effect transistors (pFET) with tungsten gates is reported. The dependence of threshold voltage, transconductance peak, and interface trap density on stress time is investigated for various negative stress voltages and temperatures. The measurements show that the threshold voltage shifts with a concomitant decrease in transconductance peak and increase in interface trap density as assessed by subthreshold slope and dc current-voltage (DCIV) method. The threshold voltage shift data are fitted with a stretched exponential equation and the fits are used for estimating lifetime. The measurements show that NBTI-related degradation in HfO2 stacks is comparable to that observed in SiO2/poly Si pFETs.

引用

页码：153 / 155

页数：3

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